Josephson effects in MgB2 meta masked ion damage junctions

Details Josephson effects in MgB2 meta masked ion damage junctions Josephson effects in MgB2 meta masked ion damage junctions

2002-06-12

arxiv.org/abs/cond-mat/0206207v1

Physics

Condensed Matter

Superconductivity

12 pages, 4 figures, RevTeX4, submitted to APL

Scientific paper

Ion beam damage combined with nanoscale focused ion beam direct milling was used to create manufacturable SNS type Josephson junctions in 100 nm thick MgB$_{2}$ with T$_{C}$ of 38 K. The junctions show non-hysteretic current - voltage characteristics between 36 and 4.2 K. Experimental evidence for the dc and ac Josephson effects in MgB$_{2}$ metal masked ion damage junctions are presented. This technique is particularly useful for prototyping devices due to its simplicity and flexibility of fabrication and has a great potential for high-density integration.

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