Investigation of 3D Patterns on EUV Masks by Means of Scatterometry and Comparison to Numerical Simulations

Details Investigation of 3D Patterns on EUV Masks by Means of Scatterometry and Comparison to Numerical Simulations Investigation of 3D Patterns on EUV Masks by Means of Scatterometry and Comparison to Numerical Simulations

2011-10-21

arxiv.org/abs/1110.4760v1

Proc. SPIE Vol. 8166 (2011) 81661Q

Physics

Optics

Scientific paper

10.1117/12.896839

EUV scatterometry is performed on 3D patterns on EUV lithography masks.
Numerical simulations of the experimental setup are performed using a rigorous
Maxwell solver. Mask geometry is determined by minimizing the difference
between experimental results and numerical results for varied geometrical input
parameters for the simulations.

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