Intersubband electronic Raman scattering in narrow GaAs single quantum wells dominated by single-particle excitations

Details Intersubband electronic Raman scattering in narrow GaAs single quantum wells dominated by single-particle excitations Intersubband electronic Raman scattering in narrow GaAs single quantum wells dominated by single-particle excitations

2004-06-08

arxiv.org/abs/cond-mat/0406193v1

Physics

Condensed Matter

Other Condensed Matter

5 pages including 4 figures

Scientific paper

10.1103/PhysRevB.70.153305

We measured resonant Raman scattering by intersubband electronic excitations in GaAs/AlAs single quantum wells (QWs) with well widths ranging from 8.5 to 18 nm. In narrow (less than 10 nm) QWs with sufficiently high electron concentrations, only single-particle excitations (SPEs) were observed in intersubband Raman scattering, which was confirmed by the well-width dependence of Raman spectra. We found characteristic variations in Raman shift and line shape for SPEs with incident photon energy in the narrow QWs.

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