Interstitial-carbon defects in Si1-xGex

Details Interstitial-carbon defects in Si1-xGex Interstitial-carbon defects in Si1-xGex

Dec 2001

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001phrvb..64w3202n&link_type=abstract

Physical Review B (Condensed Matter and Materials Physics), Volume 64, Issue 23, December 15, 2001, p.233202

Physics

Condensed Matter

9

Charge Carriers: Generation, Recombination, Lifetime, And Trapping, Point Defects And Defect Clusters, Time Series Analysis, Time Variability

Scientific paper

The interstial-carbon (Ci) defect in molecular-beam epitaxy grown, strain relaxed n-or p-type Si1-xGex for 0<=x<=0.50 has been created by 2-MeV proton or electron irradiations, and studied by deep-level transient spectroscopy on p+n- and n+p-mesa diodes. The energy difference between the shallow acceptor and donor levels of the Ci defect remains at a constant value of 0.8 eV as the Ge content is varied. The migration enthalpy of Ci is independent of composition in the composition range 0 <=x<=0.15. The observed increased stability of the Ci defect with increasing x is the result of a decrease in the entropy of the process.

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