Internal magnetic fields in thin ZnSe epilayers

Details Internal magnetic fields in thin ZnSe epilayers Internal magnetic fields in thin ZnSe epilayers

2006-09-24

arxiv.org/abs/cond-mat/0609619v1

Appl. Phys. Lett. 89, 242116 (2006)

Physics

Condensed Matter

Materials Science

9 pages, 3 figures

Scientific paper

10.1063/1.2404600

Strain induced spin-splitting is observed and characterized using pump-probe Kerr rotation spectroscopy in n-ZnSe epilayers grown on GaAs substrates. The spin-splitting energies are mapped out as a function of pump-probe separation, applied voltage, and temperature in a series of samples of varying epilayer thicknesses and compressive strain arising from epilayer-substrate lattice mismatch. The strain is independently quantified using photoluminescence and x-ray diffraction measurements. We observe that the magnitude of the spin splitting increases with applied voltage and temperature, and is highly crystal direction dependent, vanishing along [1 1-bar 0].

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