Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures

Details Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures

2002-05-21

arxiv.org/abs/cond-mat/0205449v2

Phys. Rev. Lett. v91, 126403 (2003)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 5 figures. References updated

Scientific paper

10.1103/PhysRevLett.91.126403

We compare the temperature dependence of resistivity \rho(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective mass m* and g*-factor for mobile electrons have been found independently. An anomalous increase of \rho with temperature, which has been considered a signature of the "metallic" state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance \rho(B) is qualitatively consistent with the theory; however, the lack of quantitative agreement indicates that the magnetoresistance is more susceptible to the sample-specific effects than \rho(T).

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