Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures

Physics – Condensed Matter – Strongly Correlated Electrons

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4 pages, 5 figures. References updated

Scientific paper

10.1103/PhysRevLett.91.126403

We compare the temperature dependence of resistivity \rho(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective mass m* and g*-factor for mobile electrons have been found independently. An anomalous increase of \rho with temperature, which has been considered a signature of the "metallic" state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance \rho(B) is qualitatively consistent with the theory; however, the lack of quantitative agreement indicates that the magnetoresistance is more susceptible to the sample-specific effects than \rho(T).

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