Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors

Details Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors

2000-02-25

arxiv.org/abs/cond-mat/0002399v1

Eur. Phys. J. B10 (1999) 145

Physics

Condensed Matter

Disordered Systems and Neural Networks

4 pages and 3 ps figures

Scientific paper

10.1007/s100510050837

A two-band model of a disordered semiconductor is used to analyze dynamical
interaction induced weakening of localization in a system that is accessible to
experimental verification. The results show a dependence on the sign of the
two-particle interaction and on the optical excitation energy of the
Coulomb-correlated electron-hole pair.

Affiliated with

Also associated with

No associations

Rating

Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-226274