InAs Nanowire MOS Capacitors

Details InAs Nanowire MOS Capacitors InAs Nanowire MOS Capacitors

2008-06-18

arxiv.org/abs/0806.2942v1

Appl. Phys. Lett. 92, 253509 (2008)

Physics

Condensed Matter

Materials Science

8 pages, 3 figures

Scientific paper

We present a capacitance-voltage study for arrays of vertical InAs nanowires. MOS capacitors are obtained by insulating the nanowires with a conformal 10nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.

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