In(1-x)Mn(x)Sb - a new narrow gap ferromagnetic semiconductor

Details In(1-x)Mn(x)Sb - a new narrow gap ferromagnetic semiconductor In(1-x)Mn(x)Sb - a new narrow gap ferromagnetic semiconductor

2003-03-11

arxiv.org/abs/cond-mat/0303212v1

Physics

Condensed Matter

Materials Science

12 pages, 3 figures

Scientific paper

10.1063/1.1583142

A narrow-gap ferromagnetic In(1-x)Mn(x)Sb semiconductor alloy was successfully grown by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In(1-x)Mn(x)Sb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures T_C ranging up to 8.5 K. The observed values of T_C agree well with the existing models of carrier-induced ferromagnetism.

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