Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

Details Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

2011-04-06

arxiv.org/abs/1104.1072v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 7 figures; accepted in Applied Physics Letters

Scientific paper

We report resistance versus magnetic field measurements for a La0.65Sr0.35MnO3/SrTiO3/La0.65Sr0.35MnO3 tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360^/circ, the TMR shows 4-fold symmetry, i.e. biaxial anisotropy, aligned with the crystalline axes but not the junction geometrical long axis. The TMR reaches ~ 1900% at 4K, corresponding to an interfacial spin polarization of > 95% assuming identical interfaces. These results show that uniaxial anisotropy is not necessary for large TMR, and lay the groundwork for future improvements in TMR in manganite junctions.

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