Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch

Details Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch

2010-05-07

arxiv.org/abs/1005.1237v1

Phys. Rev. B 82, 075317 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 6 figures

Scientific paper

10.1103/PhysRevB.82.075317

Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the charging energy of isolated As dopants in Si FinFETs relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured small charging energy may be due to a combined effect of the insulator screening and the proximity of metallic gates.

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