H2-free synthesis of monolayer graphene with controllable grain size by plasma enhanced chemical vapor deposition

Details H2-free synthesis of monolayer graphene with controllable grain size by plasma enhanced chemical vapor deposition H2-free synthesis of monolayer graphene with controllable grain size by plasma enhanced chemical vapor deposition

2012-03-05

arxiv.org/abs/1203.0816v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

22 pages, 5 figures

Scientific paper

We report H2-free synthesis of high-quality graphene on Cu foil by plasma enhanced chemical vapor deposition. The advantage of this method is the easily controllable grain size of graphene by adjusting the plasma power. At a plasma power of 50~70 W, the grain size of graphene can be increased by a factor of 4 compared to that of graphene synthesized in H2-rich conditions. Raman spectra reveal that the quality of synthesized graphene is as good as that of best quality graphene grown under H2-rich environments. Moreover, the synthesis temperature of monolayer graphene can be reduced down to 650 {\deg}C. Our results indicate that plasma enhanced chemical vapor deposition is an advantageous method not only for low-temperature synthesis but also for H2-free growth of graphene, which provides the ultimate advantage of the controllable synthesis of high-quality graphene with reduced flammability.

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