Growth of GaMnAs under near-stoichiometric conditions

Details Growth of GaMnAs under near-stoichiometric conditions Growth of GaMnAs under near-stoichiometric conditions

2003-12-12

arxiv.org/abs/cond-mat/0312323v1

Physics

Condensed Matter

13 pages, 4 figures

Scientific paper

We studied the effect of the V/III flux ratio and substrate temperature on magnetotransport properties and lattice parameters of Ga0.96Mn0.04As grown by molecular beam epitaxy. For all the substrate temperatures, the conductivities and Curie temperatures of the layers were found to increase as the V/III flux ratio approaches 1. The Curie temperature as high as 95 K was achieved for the Ga0.96Mn0.04As samples grown at 240C and a V/III ratio of about 1.5. The lattice parameter of Ga0.96Mn0.04As increased with decreasing V/III ratio and/or increasing growth temperature. Possible reasons for the effect of V/III ratio on the magnetotransport properties and lattice parameter of GaMnAs are discussed.

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