Growth from Below: Bilayer Graphene on Copper by Chemical Vapor Deposition

Details Growth from Below: Bilayer Graphene on Copper by Chemical Vapor Deposition Growth from Below: Bilayer Graphene on Copper by Chemical Vapor Deposition

2012-02-06

arxiv.org/abs/1202.1031v1

Physics

Condensed Matter

Materials Science

Paper plus 4 informative figures

Scientific paper

We analyze the layer stacking of bilayer graphene grains grown by chemical vapor deposition (CVD) on Cu foils. Low-energy electron diffraction and microscopy establish that the smaller hexagonal layer is located right above the Cu substrate, not on top of the larger graphene layer. Thus, the lower layer grows by carbon diffusing to its buried edge. These observations strongly support a mechanism where the new layer nucleates and grows under the first layer. We discuss how the underlayer mechanism aids achieving uniform single layers but presents challenges for growing continuous bilayer films by CVD.

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