Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures

Details Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures

2010-02-18

arxiv.org/abs/1002.3450v1

New Journal of Physics 12 (2010) 043007

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1088/1367-2630/12/4/043007

We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample configurations can be set in situ with mobilities diering by a factor of more than two in a wide range of densities. This observation is discussed in view of charge redistributions between the doping layers and is relevant for the design of future gateable high-mobility electron gases.

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