Gate capacitance of back-gated nanowire field-effect transistors

Details Gate capacitance of back-gated nanowire field-effect transistors Gate capacitance of back-gated nanowire field-effect transistors

2006-07-14

arxiv.org/abs/cond-mat/0607379v1

Physics

Condensed Matter

Other Condensed Matter

4 pages, 5 figures, to be published in Appl. Phys. Lett

Scientific paper

10.1063/1.2337853

Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results of the ``metallic cylinder on an infinite metal plate model''. Completely embedded and non-embedded NW-FETs are considered. It is shown that the use of the analytical expressions also for non-embedded NW-FETs gives carrier mobilities that are nearly two times too small. Furthermore, the electric field amplification of non-embedded NW-FETs and the influence of the cross-section shape of the nanowires are discussed.

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