Enhanced carrier scattering rates in dilute magnetic semiconductors with correlated impurities

Details Enhanced carrier scattering rates in dilute magnetic semiconductors with correlated impurities Enhanced carrier scattering rates in dilute magnetic semiconductors with correlated impurities

2006-07-07

arxiv.org/abs/cond-mat/0607177v1

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.75.045205

In III-V dilute magnetic semiconductors (DMSs) such as Ga$_{1-x}$Mn$_x$As, the impurity positions tend to be correlated, which can drastically affect the electronic transport properties of these materials. Within the memory function formalism we have derived a general expression for the current relaxation kernel in spin and charge disordered media and have calculated spin and charge scattering rates in the weak-disorder limit. Using a simple model for magnetic impurity clustering, we find a significant enhancement of the charge scattering. The enhancement is sensitive to cluster parameters and may be controllable through post-growth annealing.

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