Gate-activated photoresponse in a graphene p-n junction

Details Gate-activated photoresponse in a graphene p-n junction Gate-activated photoresponse in a graphene p-n junction

2010-12-21

arxiv.org/abs/1012.4745v2

Nano Letters 11, 4134 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1021/nl2019068

We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed, allowing on-off control of photodetection. Photocurrents generated near p-n junctions do not require biasing and can be realized using submicron gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.

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