Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures

Details Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures

2009-12-31

arxiv.org/abs/1001.0121v1

Physics

Condensed Matter

Materials Science

35 pages, 12 figures, 1 table, 2 appendices, to be submitted to Phys. Rev. B

Scientific paper

Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin films. The role of the polarization gradient and intrinsic surface energy, interface dipoles and free charges on polarization dynamics are specifically explored. The intrinsic field effects, which originated at the ferroelectric-semiconductor interface, lead to the surface band bending and result into the formation of depletion space-charge layer near the semiconductor surface. During the local polarization reversal (caused by the inhomogeneous electric field induced by the nanosized tip of the Scanning Probe Microscope (SPM) probe) the thickness and charge of the interface layer drastically changes, it particular the sign of the screening carriers is determined by the polarization direction. Obtained analytical solutions could be extended to analyze polarization-mediated electronic transport.

Affiliated with

Also associated with

No associations

Rating

Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-104500