Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

Details Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

2003-06-17

arxiv.org/abs/cond-mat/0306436v1

Appl.Phys.Lett. 83(2003), 1755

Physics

Condensed Matter

Strongly Correlated Electrons

Scientific paper

10.1063/1.1605806

A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2K shows a thermal-activation-type behavior with an activation energy of 0.6eV.

Affiliated with

Also associated with

No associations

Rating

Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-265213