Facile fabrication of lateral nanowire wrap-gate devices with improved performance

Details Facile fabrication of lateral nanowire wrap-gate devices with improved performance Facile fabrication of lateral nanowire wrap-gate devices with improved performance

2011-06-04

arxiv.org/abs/1106.0796v1

Appl. Phys. Lett. 99, 173101 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures

Scientific paper

10.1063/1.3634010

We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step, and does not require chemical etching. We measure, in the temperature range 1.5-250 K, a subthreshold slope of 5-54 mV/decade and mobility of 2800-2500 $cm^2/Vs$ -- significantly larger than previously reported lateral wrap-gate devices. At depletion, the barrier height due to the gated region is proportional to applied wrap-gate voltage.

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