Fabrication and Characterization of Boron Carbide / n-Silicon Carbide Heterojunction Diodes

Details Fabrication and Characterization of Boron Carbide / n-Silicon Carbide Heterojunction Diodes Fabrication and Characterization of Boron Carbide / n-Silicon Carbide Heterojunction Diodes

2001-01-17

arxiv.org/abs/cond-mat/0101267v1

Physics

Condensed Matter

Materials Science

8 pages, 2 figures, 1 table

Scientific paper

The fabrication, initial structural characterization and diode measurements are reported for the first boron carbide / silicon carbide heterojunction diode. Current-voltage curves obtained for operation at temperatures from 24 C to 388 C. PECVD-deposited undoped boron carbide material is highly crystalline and consists of a variety of polytypes of B-C with crystal sizes as large as 110 nm. Crystal phases are similar to those for PECVD B-C on Si but only partially match known boron and boron-rich B-C phases.

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