Circularly polarized electroluminescence from silicon nanostructures heavily doped with boron

Details Circularly polarized electroluminescence from silicon nanostructures heavily doped with boron Circularly polarized electroluminescence from silicon nanostructures heavily doped with boron

2011-04-26

arxiv.org/abs/1104.4915v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

The circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by {\delta}-barriers heavily doped with boron, 5 10^21 cm^-3, is under study as a function of temperature and excitation levels. The CPEL dependences on the forward current and temperature show the circularly polarized light emission which appears to be caused by the exciton recombination through the negative-U dipole boron centers at the Si-QW {\delta}-barriers interface.

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