Extracting excess electrons of epitaxial graphene on SiC from defect

Details Extracting excess electrons of epitaxial graphene on SiC from defect Extracting excess electrons of epitaxial graphene on SiC from defect

2011-11-02

arxiv.org/abs/1111.0411v1

Physics

Condensed Matter

Strongly Correlated Electrons

Scientific paper

We report scanning tunneling microscopy (STM) and spectroscopy (STS) of twisted graphene bilayer on C-terminated SiC(0001) substrate. For twist angle ~ 4.5o the Dirac point ED is located about 0.40 eV below the Fermi level EF, which is similar as that of single-layer graphene on SiC, due to the electron doping at the graphene/SiC interface. A nanoscaled defect of the epitaxial graphene is observed to lower the local Dirac point from 0.40 eV to 0.58 eV below EF. Remarkably, we observed an unexpected result that the local Dirac point shifts towards the Fermi energy during the measurements. This novel behavior was attributed to the extracting of surplus electrons from the defect by the STM tip. The result presented in this paper reveals an important new method to control the local electronic properties of graphene.

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