Experimental Evidence for a Spin-Polarized Ground State in the ν=5/2 Fractional Quantum Hall Effect

Details Experimental Evidence for a Spin-Polarized Ground State in the ν=5/2 Fractional Quantum Hall Effect Experimental Evidence for a Spin-Polarized Ground State in the ν=5/2 Fractional Quantum Hall Effect

2001-03-06

arxiv.org/abs/cond-mat/0103144v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

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Scientific paper

10.1016/S0038-1098(01)00311-8

We study the \nu=5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic (B) field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n=0 to 7.6 \times 10^{11} cm^{-2} with a peak mobility \mu = 5.5 \times 10^6 cm^2/Vs. The \nu=5/2 state shows a strong minimum in diagonal resistance and a developing Hall plateau at magnetic fields as high as 12.6T. The strength of the energy gap varies smoothly with B-field. We interpret these observations as strong evidence for a spin-polarized ground state at \nu=5/2.

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