Epitaxial InGaAsP/InP photodiode for registration of InP scintillation

Physics – Condensed Matter – Materials Science

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

16 pages, 11 figures

Scientific paper

Operation of semiconductor scintillators requires optically-tight integration of the photoreceiver system on the surface of the scintillator slab. We have implemented an efficient and fast quaternary InGaAsP pin photodiode, epitaxially grown upon the surface of an InP scintillator wafer and sensitive to InP luminescence. The diode is characterized by an extremely low room-temperature dark current, about 1 nA/cm2 at the reverse bias of 2 V. The low leakage makes possible a sensitive readout circuitry even though the diode has a large area (1 mm/times1 mm) and therefore large capacitance (50 pF). Results of electrical, optical and radiation testing of the diodes are presented. Detection of individual \alpha-particles and \gamma-photons is demonstrated.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Epitaxial InGaAsP/InP photodiode for registration of InP scintillation does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Epitaxial InGaAsP/InP photodiode for registration of InP scintillation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial InGaAsP/InP photodiode for registration of InP scintillation will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-636264

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.