Epitaxial GaN Nanorods via Catalytic Capillary Condensation

Details Epitaxial GaN Nanorods via Catalytic Capillary Condensation Epitaxial GaN Nanorods via Catalytic Capillary Condensation

2005-03-09

arxiv.org/abs/cond-mat/0503194v1

Physics

Condensed Matter

Materials Science

Scientific paper

Intrinsic catalytic process by capillary condensation of Ga-atoms into nanotrenches, formed among impinging islands during the wurzite-GaN thin film deposition, is shown to be an effective path to growing GaN nanorods without metal catalysts. The nano-capillary brings within it a huge imbalance in equilibrium partial pressure of Ga relative to the growth ambient. GaN nanorods thus always grow out of a holding nanotrench and conform to the boundaries of surrounding islands. The nanorods are epitaxially orientated with <0001>GaN // <111>Si and <2110>GaN // <110>Si similar to the matrix. Concaved geometry is essential and is a condition that limits the axial dimension of the nanorods protruding above the base (matrix) material region. Revelation of the growth mechanism in the current context suggests that fabrication of nano quantum structures with controlled patterns is enabling for any attainable dimensions

Affiliated with

Also associated with

No associations

Rating

Epitaxial GaN Nanorods via Catalytic Capillary Condensation does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Epitaxial GaN Nanorods via Catalytic Capillary Condensation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial GaN Nanorods via Catalytic Capillary Condensation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-369246