Epitaxial ferromagnetic Fe$_{3}$Si/Si(111) structures with high-quality hetero-interfaces

Details Epitaxial ferromagnetic Fe$_{3}$Si/Si(111) structures with high-quality hetero-interfaces Epitaxial ferromagnetic Fe$_{3}$Si/Si(111) structures with high-quality hetero-interfaces

2008-10-16

arxiv.org/abs/0810.2835v1

Appl. Phys. Lett. 93, 132117 (2008)

Physics

Condensed Matter

Materials Science

3 pages, 3 figures

Scientific paper

10.1063/1.2996581

To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe$_{3}$Si/silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 $^circ$C, we realize epitaxial growth of ferromagnetic Fe$_{3}$Si layers on Si (111) with keeping an abrupt interface, and the grown Fe$_{3}$Si layer has the ordered $DO_{3}$ phase. Measurements of magnetic and electrical properties for the Fe$_{3}$Si/Si(111) yield a magnetic moment of ~ 3.16 $mu_{B}$/f.u. at room temperature and a rectifying Schottky-diode behavior with the ideality factor of ~ 1.08, respectively.

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