Entanglement between static and flying qubits in a semiconducting carbon nanotube

Details Entanglement between static and flying qubits in a semiconducting carbon nanotube Entanglement between static and flying qubits in a semiconducting carbon nanotube

2005-11-04

arxiv.org/abs/cond-mat/0511126v2

J. Phys.: Condens. Matter 18 (2006) S851-S866

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

17 pages and 12 figures, accepted to J. Phys. Cond. Mat

Scientific paper

10.1088/0953-8984/18/21/S11

Entanglement can be generated by two electrons in a spin-zero state on a semiconducting single-walled carbon nanotube. The two electrons, one weakly bound in a shallow well in the conduction band, and the other injected into the conduction band, are coupled by the Coulomb interaction. Both transmission and entanglement are dependent on the well characteristics, which can be controlled by a local gate, and on the kinetic energy of the injected electron. Regimes with different degrees of electron correlation exhibit full or partial entanglement. In the latter case, the maximum entanglement can be estimated as a function of width and separation of a pair of singlet-triplet resonances.

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