Electrostically defined few-electron double quantum dot in silicon

Details Electrostically defined few-electron double quantum dot in silicon Electrostically defined few-electron double quantum dot in silicon

2009-04-02

arxiv.org/abs/0904.0311v1

Appl. Phys. Lett. 94, 173502 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures, accepted for Applied Physics Letters

Scientific paper

10.1063/1.3124242

A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the inter-dot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements.

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