Physics – Condensed Matter – Materials Science
Scientific paper
2008-05-21
Phys. Rev. B 78, 033304 (2008)
Physics
Condensed Matter
Materials Science
5 pages, 3 figures
Scientific paper
10.1103/PhysRevB.78.033304
The electronic structure of the magnetic semiconductor Ga$_{1-x}$Cr$_{x}$N and the effect of Si doping on it have been investigated by photoemission and soft x-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent substituting for Ga, and that Cr 3$d$ states appear within the band gap of GaN just above the N 2$p$-derived valence-band maximum. As a result of Si doping, downward shifts of the core levels (except for Cr 2$p$) and the formation of new states near the Fermi level were observed, which we attribute to the upward chemical potential shift and the formation of a small amount of Cr$^{2+}$ species caused by the electron doping. Possibility of Cr-rich cluster growth by Si doping are discussed based on the spectroscopic and magnetization data.
Asahi Hiroaki
Chang F.-H.
Chen Chien-Tsu
Fujimori Atsushi
Funakoshi M.
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