Electrical spin injection and detection in lateral all-semiconductor devices

Details Electrical spin injection and detection in lateral all-semiconductor devices Electrical spin injection and detection in lateral all-semiconductor devices

2008-09-10

arxiv.org/abs/0809.1736v1

Physics

Condensed Matter

Materials Science

11 pages, 3 figures, sent to PRL

Scientific paper

Electrical injection and detection of spin-polarized electrons is demonstrated for the first time in a single wafer, all-semiconductor, GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAs ferromagnetic Esaki diodes as spin aligning contacts. The conversion of spin-polarized holes into spin-polarized electrons via Esaki tunnelling leaves its mark in a bias dependence of the spin-injection efficiency, which at maximum reaches the relatively high value of 50%.

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