Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride

Details Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride

2011-09-12

arxiv.org/abs/1109.2566v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 4 figures, Applied Physics Letters

Scientific paper

We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was calculated to be 2.13 eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive charge density of magnitude 4.60x1012 cm-2 at the Al2O3/GaN interface. We provide hypotheses to explain the origin of this charge by analyzing the energy band line-up.

Affiliated with

Also associated with

No associations

Rating

Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-60704