Electrical detection of free induction decay and Hahn echoes in phosphorus doped silicon

Physics – Condensed Matter – Materials Science

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

9 pages, 9 figures

Scientific paper

Paramagnetic centers in a solid-state environment usually give rise to inhomogenously broadened electron paramagnetic resonance (EPR) lines, making conventionally detected free induction decay (FID) signals disappear within the spectrometer dead time. Here, experimental results of an electrically detected FID of phosphorus donors in silicon epilayers with natural isotope composition are presented, showing Ramsey fringes within the first 150 ns. An analytical model is developed to account for the data obtained as well as for the results of analogous two-pulse echo experiments. The results of a numerical calculation are further presented to assess the capability of the method to study spin-spin interactions.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Electrical detection of free induction decay and Hahn echoes in phosphorus doped silicon does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Electrical detection of free induction decay and Hahn echoes in phosphorus doped silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrical detection of free induction decay and Hahn echoes in phosphorus doped silicon will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-502181

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.