Electrical Contacts to Carbon Nanotubes Down to 1nm in Diameter

Details Electrical Contacts to Carbon Nanotubes Down to 1nm in Diameter Electrical Contacts to Carbon Nanotubes Down to 1nm in Diameter

2005-05-18

arxiv.org/abs/cond-mat/0505431v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Applied Physics Letters, in press

Scientific paper

Rhodium (Rh) is found similar to Palladium (Pd) in making near-ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d > ~ 1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S-SWNTs) with d < ~ 1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors (FETs) and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters < ~ 1.0 nm possibly due to tunnel barriers.

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