Current-Induced Spin Polarization in Gallium Nitride

Details Current-Induced Spin Polarization in Gallium Nitride Current-Induced Spin Polarization in Gallium Nitride

2009-06-03

arxiv.org/abs/0906.0785v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

16 pages, 3 figures

Scientific paper

Electrically generated spin polarization is probed directly in bulk GaN using Kerr rotation spectroscopy. A series of n-type GaN epilayers are grown in the wurtzite phase both by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) with a variety of doping densities chosen to broadly modulate the transverse spin lifetime, T2*. The spin polarization is characterized as a function of electrical excitation energy over a range of temperatures. Despite weak spin-orbit interactions in GaN, a current-induced spin polarization (CISP) is observed in the material at temperatures of up to 200 K.

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