Current flow past an etched barrier: field emission from a two-dimensional electron gas

Details Current flow past an etched barrier: field emission from a two-dimensional electron gas Current flow past an etched barrier: field emission from a two-dimensional electron gas

1997-12-23

arxiv.org/abs/cond-mat/9712275v1

Europhys. Lett, 41 (3), 327-332 (1998)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, includes 4 eps figures, uses europhys.sty, to appear in Europhysics Letters

Scientific paper

10.1209/epl/i1998-00151-4

We find that, under appropriate conditions, electrons can pass a barrier etched across a two dimensional electron gas (2DEG) by field emission from the GaAs/AlGaAs heterojunction into a second, low-density 2DEG formed deep in the substrate. The current-voltage characteristics exhibit a rapid increase in the current at the field emission threshold and intrinsic bistability above this threshold, consistent with a heating instability occurring in the second 2DEG. These results may explain similar behaviour recently seen in a number of front-gated devices by several groups.

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