Control of rectifying and resistive switching behavior in BiFeO3 thin films

Details Control of rectifying and resistive switching behavior in BiFeO3 thin films Control of rectifying and resistive switching behavior in BiFeO3 thin films

2011-08-17

arxiv.org/abs/1108.3454v1

Appl. Phys. Express 4 (2011) 095802

Physics

Condensed Matter

Materials Science

13 pages, 3 fitures

Scientific paper

10.1143/APEX.4.095802

BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure during the growth, and a large switching ratio of ~4500 has been achieved. The deposition pressure modifies the concentration of oxygen vacancies and the rectifying behavior of the Au/BiFeO3 junction, and consequently influences the resistive switching behavior of the whole stack. The switching takes place homogeneously over the entire electrode, and shows a long-term retention.

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