Comparison of near-interface traps in Al$_2$O$_3$/4H-SiC and Al$_2$O$_3$/SiO$_2$/4H-SiC structures

Details Comparison of near-interface traps in Al$_2$O$_3$/4H-SiC and Al$_2$O$_3$/SiO$_2$/4H-SiC structures Comparison of near-interface traps in Al$_2$O$_3$/4H-SiC and Al$_2$O$_3$/SiO$_2$/4H-SiC structures

2006-10-03

arxiv.org/abs/cond-mat/0610087v1

Appl. Phys. Lett. 89, 222103 (2006)

Physics

Condensed Matter

Materials Science

3 figures. Applied Physics Letters, accepted for publication

Scientific paper

10.1063/1.2387978

Aluminum oxide (Al2O3) has been grown by atomic layer deposition on n-type 4H-SiC with and without a thin silicon dioxide (SiO2) intermediate layer. By means of Capacitance Voltage and Thermal Dielectric Relaxation Current measurements, the interface properties have been investigated. Whereas for the samples with an interfacial SiO2 layer the highest near-interface trap density is found at 0.3 eV below the conduction band edge, Ec, the samples with only the Al2O3 dielectric exhibit a nearly trap free region close to Ec. For the Al2O3/SiC interface, the highest trap density appears between 0.4 to 0.6 eV below Ec. The results indicate the possibility for SiC-based MOSFETs with Al2O3 as the gate dielectric layer in future high performance devices.

Affiliated with

Also associated with

No associations

Rating

Comparison of near-interface traps in Al$_2$O$_3$/4H-SiC and Al$_2$O$_3$/SiO$_2$/4H-SiC structures does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Comparison of near-interface traps in Al$_2$O$_3$/4H-SiC and Al$_2$O$_3$/SiO$_2$/4H-SiC structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Comparison of near-interface traps in Al$_2$O$_3$/4H-SiC and Al$_2$O$_3$/SiO$_2$/4H-SiC structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-588938