Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot

Details Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot

2009-05-11

arxiv.org/abs/0905.1647v1

Nano Lett., 2009, 9 (9), pp 3234-3238

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures, submitted for publication

Scientific paper

We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes the barrier separating the two dots. The measured tunnel coupling is an exponential function of the gate voltage. The ability to control t is an important step towards controlling spin qubits in silicon quantum dots.

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