Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C

Details Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C

2003-08-11

arxiv.org/abs/cond-mat/0308200v1

Phys. Rev. B 68, 085210 (2003)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1103/PhysRevB.68.085210

Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties show marked differences. Transport measurements show anomalies, consistent with observed magnetic properties and with epi- LT-(Ga,Mn)As, as well as the extraordinary Hall Effect up to the observed magnetic ordering temperature (T_C). Mn ion-implanted p+GaAs:C with as-grown carrier concentrations > 10^20 cm^-3 show remanent magnetization up to 280 K.

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