BN/Graphene/BN Transistors for RF Applications

Details BN/Graphene/BN Transistors for RF Applications BN/Graphene/BN Transistors for RF Applications

2011-08-09

arxiv.org/abs/1108.2021v1

IEEE Electron Device Letters, vol. 32, no. 9, pp. 1209-1211, Sept. 2011

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 5 figures, accepted for publication in IEEE Electron Device Letters

Scientific paper

10.1109/LED.2011.2160611

In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even when it is sandwiched between a substrate and a gate dielectric. Field effect transistors (FETs) using a bilayer graphene channel have been fabricated with a gate length LG=450 nm. A current density in excess of 1 A/mm and DC transconductance close to 250 mS/mm are achieved for both electron and hole conductions. RF characterization is performed for the first time on this device structure, giving a current-gain cut-off frequency fT=33 GHz and an fT.LG product of 15 GHz.um. The improved performance obtained by the BN/Graphene/BN structure is very promising to enable the next generation of high frequency graphene RF electronics.

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