Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions

Details Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions

2006-07-26

arxiv.org/abs/cond-mat/0607670v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

11 pages, 3 figures, submitted to Appl. Phys. Lett

Scientific paper

10.1063/1.2364163

We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and observable at room temperature. If an epitaxial Fe/GaAs(001) interface is involved, the tunnel junction exhibits a bias dependent inversion of the TMR effect. This is a first experimental signature for band structure effects at a Fe/GaAs interface and relevant for spin injection experiments.

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