Barrier formation at metal/organic interfaces: dipole formation and the Charge Neutrality Level

Details Barrier formation at metal/organic interfaces: dipole formation and the Charge Neutrality Level Barrier formation at metal/organic interfaces: dipole formation and the Charge Neutrality Level

2004-05-21

arxiv.org/abs/cond-mat/0405491v1

Physics

Condensed Matter

Materials Science

7 pages, Proceedings of ICFSI-9, Madrid, Spain (September 2003), special issue of Applied Surface Science (in press)

Scientific paper

10.1016/j.apsusc.2004.05.084

The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced Density of Interface States (IDIS) model. Using weak chemisorption theory, we calculate the induced density of states in the organic energy gap and show that it is high enough to control the barrier formation. We calculate the Charge Neutrality Levels of several organic molecules (PTCDA, PTCBI and CBP) and the interface Fermi level for their contact with a Au(111) surface. We find an excellent agreement with the experimental evidence and conclude that the barrier formation is due to the charge transfer between the metal and the states induced in the organic energy gap.

Affiliated with

Also associated with

No associations

Rating

Barrier formation at metal/organic interfaces: dipole formation and the Charge Neutrality Level does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Barrier formation at metal/organic interfaces: dipole formation and the Charge Neutrality Level, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Barrier formation at metal/organic interfaces: dipole formation and the Charge Neutrality Level will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-679184