Asymmetric pulsing for reliable operation of titanium/manganite memristors

Details Asymmetric pulsing for reliable operation of titanium/manganite memristors Asymmetric pulsing for reliable operation of titanium/manganite memristors

2011-02-22

arxiv.org/abs/1102.4554v1

Physics

Condensed Matter

Materials Science

10 pages, 4 figures. To be published in Applied Physics Letters

Scientific paper

We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than $10^{5}$ switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles.

Affiliated with

Also associated with

No associations

Rating

Asymmetric pulsing for reliable operation of titanium/manganite memristors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Asymmetric pulsing for reliable operation of titanium/manganite memristors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Asymmetric pulsing for reliable operation of titanium/manganite memristors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-559844