Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

Details Application of Raman Scattering to Study the Strain Distribution in SiGe Layers Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

1999-05-12

arxiv.org/abs/cond-mat/9905175v3

Physics

Condensed Matter

Materials Science

3 pages, 4 figures, 1 table

Scientific paper

In this paper, we mainly present a new simple, efficient and nondestructive Raman scattering analysis method to study the distribution of strain in SiGe alloy films. The method can simultaneously determine both Ge fractional composition x and strain of SiGe films. We use the Ar+ laser lines (514.5, 488 and 457.9 nm) to detect the information of different depth of SiGe layers. The results show that the x value (about 0.50) of Si1-xGex and the strain of the films decrease from the interface between SiGe layers and Si substrates to SiGe surface.

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