Antilocalization and spin-orbit coupling in hole strained GaAs/InGaAs/GaAs quantum well heterostructures

Details Antilocalization and spin-orbit coupling in hole strained GaAs/InGaAs/GaAs quantum well heterostructures Antilocalization and spin-orbit coupling in hole strained GaAs/InGaAs/GaAs quantum well heterostructures

2004-09-14

arxiv.org/abs/cond-mat/0409342v1

Phys. Rev. B 71, 165312 (2005)

Physics

Condensed Matter

Disordered Systems and Neural Networks

7 pages, 7 figures

Scientific paper

10.1103/PhysRevB.71.165312

Low-field magnetoresistance in p-type strained quantum wells is studied. It
is shown that the Rashba mechanism leads to the cubic in quasimomentum
spin-orbit splitting of the hole energy spectrum and the antilocalization
behavior of low-field magnetoresistance is well described by the
Hikami-Larkin-Nagaoka expression.

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