Anti-bunched photons from a lateral light-emitting diode

Details Anti-bunched photons from a lateral light-emitting diode Anti-bunched photons from a lateral light-emitting diode

2011-09-22

arxiv.org/abs/1109.4757v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

We demonstrate anti-bunched emission from a lateral-light emitting diode. Sub-Poissonian emission statistic, with a g$^{(2)}$(0)=0.7, is achieved at cryogenic temperature in the pulsed low-current regime, by exploiting electron injection through shallow impurities located in the diode depletion region. Thanks to its simple fabrication scheme and to its modulation bandwidth in the GHz range, we believe our devices are an appealing substitute for highly-attenuated lasers in existing quantum-key-distribution systems. Our devices outperform strongly-attenuated lasers in terms of multi-photon emission events and can therefore lead to a significant security improvement in existing quantum key distribution systems.

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