Anisotropy and large magnetoresistance in narrow gap semiconductor FeSb2

Details Anisotropy and large magnetoresistance in narrow gap semiconductor FeSb2 Anisotropy and large magnetoresistance in narrow gap semiconductor FeSb2

2002-06-11

arxiv.org/abs/cond-mat/0206190v1

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 4 figures, Submitted to Phys. Rev. B

Scientific paper

10.1103/PhysRevB.67.155205

A study of the anisotropy in magnetic, transport and magnetotransport properties of FeSb2 has been made on large single crystals grown from Sb flux. Magnetic susceptibility of FeSb2 shows diamagnetic to paramagnetic crossover around 100K. Electrical transport along two axes is semiconducting whereas the third axis exhibits a metal - semiconductor crossover at temperature Tmin which is sensitive to current alignment and ranges between 40 and 80K. In H=70kOe semiconducting transport is restored for T<300K, resulting in large magnetoresistance [rho(70kOe)-rho(0)]/rho(0)=2200% in the crossover temperature range

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